Transistors SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE(sat). Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -5 V IC -1 A ICP * -2 A PC 0.5 W Collector current Collector current(Pulse) Collector power dissipation Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Single pulse, Pw=100ms Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -80 V Collector-emitter breakdown voltage BVCEO IC=-1mA -80 V Emitter-base breakdown voltage BVEBO IE=-50ìA -5 V Collector cutoff current ICBO VCB=-60V Emitter cutoff current IEBO VEB=-4V Collector-emitter saturation voltage hFE VCE=-3V, IC=-0.1A 82 Transition frequency Cob Output capacitance fT ìA -1 ìA 390 VCE(sat) IC=-500mA,IB=-50mA DC current transfer ratio -1 -0.4 V VCE=-5V, IE=50mA, f=30MHz 100 MHz VCB=-10V, IE=0A, f=1MHz 25 pF hFE Classification BE Marking Rank P Q R hFE 82 180 120 270 180 390 www.kexin.com.cn 1