Transistors SMD Type PNP silicon Transistor 2SA1576 Features Low noise:NF=0.5dB(TYP.) Epitaxial planar type. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Collector current IC -100 A Collector power dissipation PC 200 W Junction temperature Tj 125 Storage temperature Tstg -55 to +125 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -50 V Collector-emitter breakdown voltage BVCEO IC=-1mA -40 V Emitter-base breakdown voltage -5 BVEBO IE=-50ìA Collector cutoff current ICBO VCB=-30V -0.5 ìA V Emitter cutoff current IEBO VEB=-4V -0.5 ìA -0.5 V VCE(sat) IC/IB=-50mA/-5mA Collector-emitter saturation voltage hFE VCE=-6V, IC=-1mA Transition frequency fT VCE=-12V, IE=2mA 140 MHz Output capacitance Cob VCB=-12V, IE=0A, f=1MHz 3.5 pF DC current transfer ratio 120 560 hFE Classification Marking Q R S hFE 120 270 180 390 270 560 www.kexin.com.cn 1