Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB956 Features Large collector power dissipation PC Low collector-emitter saturation voltage VCE(sat) Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Collector current IC -1 A Peak collector current ICP -2 A Collector power dissipation PC 1 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter 3 Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -1 mA, IB = 0 -20 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -5 V Collector-base cutoff current ICBO VCB = -10 V, IE = 0 hFE VCE = -2 V, IC = -500 mA Forward current transfer ratio Collector-emitter saturation voltage VCE(sat) IC = -1 A, IB = -50 mA Base-emitter saturation voltage VBE(sat) IC = -500 mA, IB = -50 mA Transition frequency fT Collector output capacitance Cob -1 130 nA 280 -0.5 -1.2 V V VCB = -6 V, IE = 50 mA, f = 200 MHz 200 MHz VCB = -6 V, IE = 0, f = 1 MHz 40 pF * Pulse measurement. hFE Classification Marking HR HS hFE 130 210 180 280 www.kexin.com.cn 1