KEXIN 2SB956

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SB956
Features
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-20
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-1
A
Peak collector current
ICP
-2
A
Collector power dissipation
PC
1
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
3
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -1 mA, IB = 0
-20
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
-5
V
Collector-base cutoff current
ICBO
VCB = -10 V, IE = 0
hFE
VCE = -2 V, IC = -500 mA
Forward current transfer ratio
Collector-emitter saturation voltage
VCE(sat) IC = -1 A, IB = -50 mA
Base-emitter saturation voltage
VBE(sat) IC = -500 mA, IB = -50 mA
Transition frequency
fT
Collector output capacitance
Cob
-1
130
nA
280
-0.5
-1.2
V
V
VCB = -6 V, IE = 50 mA, f = 200 MHz
200
MHz
VCB = -6 V, IE = 0, f = 1 MHz
40
pF
* Pulse measurement.
hFE Classification
Marking
HR
HS
hFE
130 210
180 280
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