Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SB970 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Mini type package,allowing downsizing of the equipment and automatic 0.4 3 Low collector-emitter saturation voltage VCE(sat). 1 0.55 insertion through the tape packing and the magazine packing. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -10 V Emitter-base voltage VEBO -7 V Collector current IC -.5 A Peak collector current ICP -1 A Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -15 V Collector-emitter voltage VCEO IC = -1 mA, IB = 0 -10 V -7 Emitter-base voltage VEBO IE = -10 ìA, IC = 0 Collector-base cutoff current ICBO VCB = -10 V, IE = 0 Forward current transfer ratio hFE VCE = -2 V, IC = -0.5A V -100 130 nA 350 Collector-emitter saturation voltage VCE(sat) IC = -0.4 A, IB = -8 mA -0.16 -0.3 V Base-emitter saturation voltage VBE(sat) IC = -0.4 A, IB = -8 mA -0.8 -1.2 V Transition frequency fT Collector output capacitance Cob VCB = -10 V, IE = 50 mA , f = 200 MHz 130 MHz VCB = -10V , IE = 0 , f = 1.0MHz 22 pF * Pulse measurement. hFE Classification 1R Marking Rank R S hFE 130 220 180 350 www.kexin.com.cn 1