KEXIN 2SB766

Transistors
IC
SMD Type
Silicon PNP Epitaxial Planar Type
2SB766,2SB766A
Features
Large collector power dissipation PC
Mini type package, allowing downsizing of the equipment and automatic
insertion through the tape packing and the magazine packing
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
2SB766
VCBO
2SB766A
Collector-emitter voltage
2SB766
-30
Unit
V
-60
VCEO
2SB766A
Emitter-base voltage
Rating
-25
V
-50
VEBO
-5
V
Collector current
IC
-1
A
Peak collector current
ICP
-1.5
A
Collector power dissipation
PC
-1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SB766,2SB766A
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-base voltage
2SB766
VCBO
Testconditons
IC = -10 ìA, IE = 0
2SB766A
Collector-emitter voltage
2SB766
Typ
Max
-30
Unit
V
-60
VCEO
IC = -2 mA, IB = 0
2SB766A
-25
V
-50
Emitter-base voltage
VEBO
IE = -10ìA, IC = 0
Collector-base cutoff current
ICBO
VCB = -20 V, IE = 0
Forward current transfer ratio
hFE
-5
V
-0.1
VCE = -10 V, IC = -500 mA
85
VCE = -5 V, IC = -1 A
50
nA
340
Collector-emitter saturation voltage
VCE(sat) IC = -500 mA, IB = -50 mA
-0.2
-0.4
V
Base-emitter saturation voltage
VBE(sat) IC = -500 mA, IB = -50 mA
-0.85
-1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCB = -10 V, IE = 50 mA, f = 200 MHz
200
VCB = -10 V, IE = 0, f = 1 MHz
20
hFE Classification
2SB766(A)/2SB766A(B)
Marking
2
Min
Rank
Q
R
S
hFE
85 170
120 240
17 340
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MHz
30
pF