KEXIN 2SC2735

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC2735
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
50
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
30
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
20
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
3
V
Collector cutoff current
ICBO
Collector to emitter saturation voltage
VCB = 10V, IC = 0
VCE(sat) IC = 10 mA, IB = 5 mA
DC current transfer ratio
hFE
VCE = 10 V, IC = 5 mA
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
CG
VCC = 6 V, IC = 2 mA,f = 900 MHz,
fosc = 930 MHz (0dBm) ,f = 30 MHz
VOSC1
0.5
ìA
1.0
V
1.5
pF
40
0.85
1200
MHz
VCC = 6 V, IC = 5 mA, f = 930 MHz
210
mV
VOSC2
VCC = 12 V, IC = 7 mA, fOSC = 930 MHz
130
mV
Conversion gain
CG
VCC = 12 V, IC = 2 mA,f = 200 MHz, fOSC
= 230 MHz (0dBm)
21
dB
Noise figure
NF
VCC = 12 V, IC = 2 mA, f = 200 MHz,
fOSC = 230 MHz (0dBm)
6.5
dB
Oscillating output voltage
600
Marking
Marking
JC
www.kexin.com.cn
1