Transistors SMD Type Silicon PNP Epitaxial 2SA1468 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 High voltage amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -180 V Collector to emitter voltage VCEO -180 V Emitter to base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector to base breakdown voltage V(BR)CBO IC = -10 ìA, IE = 0 -180 V Collector to emitter breakdown voltage V(BR)CEO IC = -0.5 mA, RBE = -180 V Emitter to base breakdown voltage V(BR)EBO IE = -10 ìA, IC = 0 -5 V DC current transfer ratio hFE Collector to emitter saturation voltage VCE = -12 V,IC = -2 mA 100 320 VCE(sat) IC = -30 mA,IB = -3 mA Base emitter voltage Gain bandwidth product Collector output capacitance -0.5 V -1 V VBE VCE = -12 V, IC = -2 mA fT VCE = -12 V,IC = -10 mA 200 MHz VCB = -10 V, IE = 0,f = 1 MHz 3.5 pF Cob hFE Classification Marking INB INC Rank B C hFE 100 200 160 320 www.kexin.com.cn 1