Transistors IC SMD Type Silicon PNP Epitaxial 2SA1171 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 Low frequency small signal amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -90 V Collector to emitter voltage VCEO -90 V Emitter to base voltage VEBO -5 V Collector current IC -50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector to emitter breakdown voltage Testconditons V(BR)CEO IC = -1 mA, RBE = Min Typ Max Unit -0.5 ìA -90 V Collector cutoff current ICBO VCB = -75 V, IE = 0 DC current transfer ratio hFE VCE = -12 V, IC = -2 mA VBE VCE = -12 V, IC = -2 mA -0.75 V VCE(sat) IC = -10 mA, IB = -1 mA -0.5 V Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product fT Collector output capacitance Cob 250 800 VCE = -12 V, IC = -2 mA 200 MHz VCB = -25 V, IE = 0, f = 1 MHz 1.6 pF hFE Classification Marking PD PE hFE 250 500 400 800 www.kexin.com.cn 1