Transistors SMD Type NPN Transistor 2SC3052 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 Power dissipation :PC=0.15W 0.55 Collector current :IC=0.2A +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 200 mA power dissipation * Pc 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 2 * . 0.7 mmx16 cm ceramic substrate Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit 50 V A,IB=0 50 V A,IC=0 6 V Collector-base breakdown voltage VCBO Collector-emitter breakdown voltage VCEO IC=100 Emitter-base breakdown voltage VEBO IE=100 Collector cut-off current ICBO VCB=50V,IE=0 0.1 A Emitter cut-off current IEBO VEB=6V,IC=0 0.1 A hFE DC current gain IC = 100 A,IE=0 VCE=6V,IC=1mA 150 VCE=6V,IC=0.1mA 50 800 Collector-emitter saturation voltage VCE(sat) IC=100mA,IB= 10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 100mA,IB= 10mA 1 V VCE=6V, IE=0, f=1MHz 4 pF Collector output capacitance Cob Noise figure NF VCE=6V,IE=-0.1mA, f=1KHz, RG=2K Transition frequency fT VCE= 6V, IC= 10mA 15 180 dB MHz hFE Classification Marking LE LF LG Rank E F G hFE 150 to 300 250 to 500 400 to 800 www.kexin.com.cn www.kesenes.com 1