Transistors IC SMD Type Silicon NPN Epitaxial 2SC4209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V IC 300 mA Collector current Base current IB 60 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Testconditons ICBO VCB = 50 V, IE = 0 IEBO VEB = 5 V, IC = 0 V(BR)CEO IC = 5mA , IB = 0 DC current gain hFE Collector-emitter saturation voltage VCE = 2 V, IC = 50 mA Min Typ VBE Transition frequency fT Collector output capacitance Cob VCE = 2 V, IC = 5 mA Unit 0.1 ìA 0.1 ìA 80 V 70 240 0.5 V 0.55 0.8 V VCE (sat) IC = 200 mA, IB = 10 mA Base-emitter voltage Max VCE = 10 V, IC = 10 mA 100 MHz VCB = 10 V, IE = 0, f = 1 MHz 10 pF hFE Classification C Marking Rank O Y hFE 70 140 120 240 www.kexin.com.cn 1