KEXIN 2SA1015

Transistors
IC
SMD Type
PNP Transistor
2SA1015
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
VCEO:=-50V(min.),IC=-150mA(max.)
0.55
High voltage and high current
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
Low niose: NF=1dB(Typ.) at f=1KHz
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current -Continuous
IC
150
mA
Collector Power Dissipation
PC
200
mW
Junction Temperature
TJ
125
Storage Temperature
Tstg
-55 to 125
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
Ic= -100
-50
V
Collector-emitter breakdown voltage
VCEO
Ic= -0.1mA, IB=0
-50
V
Emitter-base breakdown voltage
VEBO
IE= -100
-5
V
Collector cut-off current
ICBO
VCB=-50V , IE=0
-0.1
A
Collector cut-off current
ICEO
VCE= -50V , IB=0
-0.1
A
Emitter cut-off current
IEBO
VEB=- 5V , IC=0
-0.1
A
hFE
VCE=-6V, IC= -2mA
DC current gain
A, IE=0
A, IC=0
130
400
Collector-emitter saturation voltage
VCE(sat)
IC=-100 mA, IB= -10mA
-0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=-100 mA, IB= -10mA
-1.1
V
Transition frequency
fT
VCE=-10V, IC= -1mA,f=30MHz
80
MHz
hFE Classification
BA
Marking
Rank
hFE
L
130
H
200
200
400
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