KEXIN 2SC4210

Transistors
IC
SMD Type
Silicon NPN Epitaxial
2SC4210
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
+0.1
1.3-0.1
+0.1
2.4-0.1
High DC current gain: hFE = 100 320.
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Collector current
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Testconditons
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V(BR)CEO IC = 10mA , IB = 0
DC current gain
hFE
Collector-emitter saturation voltage
VCE = 1 V, IC = 100 mA
Min
Typ
Max
Unit
0.1
ìA
0.1
ìA
30
V
100
320
0.5
V
0.5
0.8
V
VCE (sat) IC = 500 mA, IB = 20 mA
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
Transition frequency
fT
VCE = 5 V, IC = 10 mA
120
MHz
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Collector output capacitance
Cob
hFE Classification
A
Marking
Rank
O
Y
hFE
100 200
160 320
www.kexin.com.cn
1