Transistors IC SMD Type Silicon NPN Epitaxial 2SC4210 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain: hFE = 100 320. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V IC 800 mA Base current IB 160 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current Electrical Characteristics Ta = 25 Parameter Symbol Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Testconditons ICBO VCB = 35 V, IE = 0 IEBO VEB = 5 V, IC = 0 V(BR)CEO IC = 10mA , IB = 0 DC current gain hFE Collector-emitter saturation voltage VCE = 1 V, IC = 100 mA Min Typ Max Unit 0.1 ìA 0.1 ìA 30 V 100 320 0.5 V 0.5 0.8 V VCE (sat) IC = 500 mA, IB = 20 mA Base-emitter voltage VBE VCE = 1 V, IC = 10 mA Transition frequency fT VCE = 5 V, IC = 10 mA 120 MHz VCB = 10 V, IE = 0, f = 1 MHz 13 pF Collector output capacitance Cob hFE Classification A Marking Rank O Y hFE 100 200 160 320 www.kexin.com.cn 1