KEXIN 2SA1971

Transistors
SMD Type
Silicon PNP Triple Diffused Type
2SA1971
Features
High voltage: VCE = -400 V
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-400
V
Collector-emitter voltage
VCEO
-400
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-0.5
A
Collector current(pulse)
ICP
-1
A
Base current
IB
-0.25
A
Collector power dissipation
500
PC
mW
1000 *
Junction temperature
Storage temperature range
Tj
150
Tstg
-55 to +150
* Mounted on ceramic substrate (250 mm2 X 0.8 t)
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
ICBO
VCB =-400V, IE=0
-10
ìA
Emitter cut-off current
IEBO
VEB=-7V,IC=0
-1
ìA
Collector-emitter breakdown voltage
DC current gain
Symbol
Testconditons
V(BR)CEO IC=-10mA, IB=0
hFE
Min
Typ
-400
V
VCE=-5V,IC=-20mA
140
450
VCE=-5V,IC=-100mA
140
400
Collector-emitter saturation voltage
VCE (sat) IC=-100mA,IB=-10mA
-0.4
-1
V
Base-emitter saturation voltage
VBE (sat) IC=-100mA,IB=-10mA
-0.76
-0.9
V
Transition frequency
fT
VCE=-5V,IC=-50mA
35
MHz
VCB=-10V,IE=0,f=1MHz
18
pF
Collector output capacitance
Cob
Turn-on time
ton
0.2
ìs
Storage time
tstg
2.3
ìs
tf
0.2
ìs
Fall time
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