KEXIN 2SB1667

Transistors
SMD Type
Silicon PNP Triple Diffused Type
2SB1667
TO-252
+0.1
0.80-0.1
+0.1
0.60-0.1
2.3
+0.15
4.60-0.15
2.30
0.127
max
3 .8 0
+0.8
0.50-0.7
+0.15
5.55 -0.15
+0.15
1.50 -0.15
+0.15
0.50 -0.15
+0.2
9.70 -0.2
Low collector saturation voltage.
Unit: mm
+0.1
-0.1
+0.25
2.65 -0.1
6.50
+0.2
5.30-0.2
+0.15
-0.15
+0.28
1.50 -0.1
Features
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-60
V
Collector-emitter voltage
VCEO
-60
V
Emitter-base voltage
VEBO
-7
V
Collector current
IC
-3
A
Base current
IB
-0.5
A
1.5
W
25
W
Collector power dissipation
Ta = 25
PC
TC = 25
Junction temperature
Storage temperature range
Tj
150
Tstg
-55 to +150
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1
Transistors
SMD Type
2SB1667
Electrical Characteristics Ta = 25
Max
Unit
Collector cut-off current
Parameter
Symbol
ICBO
VCB = -60 V, IE = 0
-100
ìA
Emitter cut-off current
IEBO
VEB = -7 V, IC = 0
-100
ìA
Collector-emitter breakdown voltage
V(BR)CEO IC=-50mA, IB=0
DC current gain
hFE
Collector-emitter saturation voltage
Min
-60
VCE = -5 V, IC = -0.5 A
60
VCE = -5 V, IC = -3 A
20
VCE (sat) IC = -3 A, IB = -0.3 A
Typ
V
300
-0.5
-1.7
V
Base-emitter voltage
VBE
VCE = -5A, IC =-0.5 A
-0.7
-1.0
V
Transition frequency
fT
VCE = -5V, IC =-0.5 A
9
MHz
150
pF
VCB = -10V, IE = 0, f = 1 MHz
Collector output capacitance
Cob
Turn-on time
ton
0.4
ìs
Storage time
tstg
1.7
ìs
tf
0.5
ìs
Fall time
hFE Classification
2
Testconditons
Rank
O
Y
hFE
60 120
100 200
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