Transistors SMD Type Silicon PNP Triple Diffused Type 2SB1667 TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 2.30 0.127 max 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector saturation voltage. Unit: mm +0.1 -0.1 +0.25 2.65 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.28 1.50 -0.1 Features 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V Collector current IC -3 A Base current IB -0.5 A 1.5 W 25 W Collector power dissipation Ta = 25 PC TC = 25 Junction temperature Storage temperature range Tj 150 Tstg -55 to +150 www.kexin.com.cn 1 Transistors SMD Type 2SB1667 Electrical Characteristics Ta = 25 Max Unit Collector cut-off current Parameter Symbol ICBO VCB = -60 V, IE = 0 -100 ìA Emitter cut-off current IEBO VEB = -7 V, IC = 0 -100 ìA Collector-emitter breakdown voltage V(BR)CEO IC=-50mA, IB=0 DC current gain hFE Collector-emitter saturation voltage Min -60 VCE = -5 V, IC = -0.5 A 60 VCE = -5 V, IC = -3 A 20 VCE (sat) IC = -3 A, IB = -0.3 A Typ V 300 -0.5 -1.7 V Base-emitter voltage VBE VCE = -5A, IC =-0.5 A -0.7 -1.0 V Transition frequency fT VCE = -5V, IC =-0.5 A 9 MHz 150 pF VCB = -10V, IE = 0, f = 1 MHz Collector output capacitance Cob Turn-on time ton 0.4 ìs Storage time tstg 1.7 ìs tf 0.5 ìs Fall time hFE Classification 2 Testconditons Rank O Y hFE 60 120 100 200 www.kexin.com.cn