Transistors IC SMD Type NPN Silicon Transistor 2SC5343SF SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low output capacitance:Cob=2pF(Typ.) 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low collector saturation voltage: VCE=0.25V(Max.) 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Collector dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=100ìA 60 V Collector-emitter breakdown voltage BVCEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage BVEBO IE=10ìA, IC=0 5 V Collector cutoff current ICBO VCB=60V, IE=0 0.1 ìA Emitter cutoff current IEBO VEB=5V, IC=0 0.1 ìA DC current transfer ratio hFE VCE=6V, IC=2mA Collector-emitter saturation voltage , IE=0 70 700 VCE(sat) IC/IB=100mA/10mA Transition frequency fT Output capacitance Cob VCB=10V, IE=0, f=1MHz Noise figure NF VCE=6V, IC=0.1mA, f=1KHz, Rg=10kÙ VCE=10V, IC=1mA, 0.25 80 V MHz 2 3.5 pF 10 dB hFE Classification DA Marking Rank O Y G L hFE 70 140 120 240 200 400 300 700 www.kexin.com.cn 1