MOSFET SMD Type MOS Field Effect Transistor 2SK3434 TO-263 +0.1 1.27-0.1 RDS(on)2 = 31 m MAX. (VGS = 4 V, ID = 24A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss =2100 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 24A) +0.2 8.7-0.2 RDS(on)1 = 20m Built-in gate protection diode +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 Super low on-state resistance: +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 Features Unit: mm 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS Drain current Power dissipation TC=25 20 V ID 48 A Idp * 192 A 56 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 2.0 Yfs VDS=10V,ID=20A 13 27 RDS(on)1 VGS=10V,ID=24A 16 20 m RDS(on)2 VGS=4V,ID=24A 22 31 m Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss VDS=10V,VGS=0,f=1MHZ 10 A 10 2.5 A V S 2100 pF Output capacitance Coss 340 pF Reverse transfer capacitance Crss 170 pF Turn-on delay time ton 40 ns 400 ns 120 ns 160 ns 40 nC 7 nC 11 nC Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD ID=24A,VGS(on)=10V,RG=10 ,VDD=30V ID =48A, VDD =48V, VGS = 10 V www.kexin.com.cn 1