TYSEMI 2SK3716

Transistors
IC
MOSFET
SMD Type
Product specification
2SK3716
TO-252
Features
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Low Ciss: Ciss = 2700 pF TYP.
Built-in gate protection diode
2.3
+0.1
0.60-0.1
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
+0.1
0.80-0.1
+0.28
1.50-0.1
RDS(on)2 = 9.1 mÙ MAX. (VGS = 4.5 V, ID = 30 A)
+0.15
0.50-0.15
+0.2
9.70-0.2
RDS(on)1 = 6.5 mÙ MAX. (VGS = 10 V, ID = 30 A)
3.80
Super low on-state resistance:
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
40
Gate to source voltage
VGSS
20
V
ID
60
A
240
A
Drain current
Idp *
Power dissipation
TA=25
1.0
PD
V
W
84
TC=25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
Unit
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Symbol
VDS=40V,VGS=0
Typ
VGS= 20V,VDS=0
VDS=10V,ID=1mA
1.5
2.0
Yfs
VDS=10V,ID=30A
22
43
RDS(on)1
VGS=10V,ID=30A
RDS(on)2
VGS=4.5V,ID=30A
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
Turn-off delay time
toff
Fall time
tf
Max
10
IGSS
Ciss
10
2.5
Unit
A
A
V
S
5.2
6.5
mÙ
6.6
9.1
mÙ
2700
pF
770
pF
Crss
290
pF
ton
11
ns
13
ns
QG
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
http://www.twtysemi.com
Min
VGS(off)
Input capacitance
Total Gate Charge
Testconditons
IDSS
VDS=10V,VGS=0,f=1MHZ
ID=30A,VGS(on)=10V,RG=0 ,VDD=20V
VDD = 32V
VGS = 10 V
ID =60A
[email protected]
69
ns
14
ns
50
nC
9
nC
13
nC
4008-318-123
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