IC MOSFET SMD Type MOS Field Effect Transistor 2SK3113 Features TO-252 Low on-state resistance MAX. (VGS = 10 V, ID = 1.0 A) +0.15 1.50-0.15 RDS(on) = 4.4 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low gate charge Avalanche capability ratings 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 30 V +0.15 0.50-0.15 Gate voltage rating +0.2 9.70-0.2 QG = 9 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 2.0 A) 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V ID 2.0 A Idp * 8.0 A Drain current Power dissipation TC=25 PD 20 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=600V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=1.0A 0.5 RDS(on) VGS=10V,ID=1.0A Gate to source cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss VDS=10V,VGS=0,f=1MHZ Typ Max Unit 100 A 10 3.5 A V S 3.3 4.4 260 pF Output capacitance Coss 60 pF Reverse transfer capacitance Crss 5 pF Turn-on delay time ton 7 ns Rise time tr Turn-off delay time toff Fall time tf ID=1.0A,VGS(on)=10V,VDD=150V,RG=10 ,RL=10 2 ns 22 ns 9 ns www.kexin.com.cn 1