IC MOSFET SMD Type MOS Field Effect Transistor 2SK3919 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 5 V drive available 2.3 +0.1 0.60-0.1 0.127 max 3.80 +0.15 5.55-0.15 +0.1 0.80-0.1 +0.25 2.65-0.1 Low Ciss: Ciss = 2050 pF TYP. +0.28 1.50-0.1 MAX. (VGS = 10 V, ID = 32 A) +0.2 9.70-0.2 RDS(on)1 = 5.6 m +0.15 0.50-0.15 Low on-state resistance 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 25 V Gate to source voltage VGSS 20 V ID 64 A 256 A Drain current Idp * Power dissipation TA=25 1.0 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 36 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 2.5 Yfs VDS=10V,ID=16A 9.7 19 RDS(on)1 VGS=10V,ID=32A 4.5 5.6 mÙ RDS(on)2 VGS=5.0V,ID=16A 6.8 13.7 mÙ Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance VDS=25V,VGS=0 Ciss VDS=10V,VGS=0,f=1MHZ 10 100 3.0 A nA V S 2050 pF Output capacitance Coss 460 pF Reverse transfer capacitance Crss 330 pF Turn-on delay time ton 16 ns 19 ns 53 ns 22 ns 42 nC 8 nC 15 nC Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD ID=32A,VGS(on)=10V,RG=10 ,VDD=12.5V VDD = 20V VGS = 10 V ID =64A VF(S-D) IF = 64A, VGS = 0 V 0.97 V Reverse Recovery Time trr IF = 64 A, VGS = 0 V 23 ns Reverse Recovery Charge Qrr di/dt = 100 A/ ìs 11 nC Body Diode Forward Voltage www.kexin.com.cn 1