Transistors IC SMD Type Silicon N-channel power MOSFET 2SK3560 1 .2 7 -0+ 0.1.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 +0.1 0.81-0.1 2.54 2.54 +0.2 -0.2 +0.1 5.08-0.1 1 5 .2 5 -0+ 0.2.2 0.1max +0.1 1.27-0.1 5 .2 8 -0+ 0.2.2 For high-speed switching 2 .5 4 -0+ 0.2.2 8 .7 -0+ 0.2.2 High avalanche resistance 5 .6 0 Low on-resistance, low Qg +0.2 0.4-0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 230 V Gate-source surrender voltage VGSS 30 V Drain current ID 30 A Peak drain current IDP 120 A Power dissipation Ta = 25 PD Power dissipation 3 W 50 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 www.kexin.com.cn 1 Transistors IC SMD Type 2SK3560 Electrical Characteristics Ta = 25 Parameter Testconditons Gate-drain surrender voltage VDSS ID = 1 mA, VGS = 0 IDR = 30 A, VGS = 0 Diode forward voltage VDSF Gate threshold voltage Vth VDS = 25 V, ID = 1 mA Drain-source cutoff current IDSS VDS = 184 V, VGS = 0 IGSS VGS = Gate-source cutoff currentt Drain-source on resistance Forward transfer admittance Yfs Short-circuit forward transfer capacitance Ciss Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Turn-off delay time Min tr 2 55 8 Unit -1.5 V 4 V 100 ìA 1 ìA 74 mÙ 19 S 2 330 pF 356 pF 44 pF 100 V, ID = 15 A 39 ns 6.7 Ù, VGS = 10 V 37 ns 221 ns 46 ns 164 ns VDS = 25 V, VGS = 0, f = 1 MHz RL Max V 30 V, VDS = 0 VDS = 25 V, ID = 15 A VDD Typ 230 RDS(on) VGS = 10 V, ID = 15 A Short-circuit output capacitance Rise time td(off) Fall time tf Reverse recovery time trr L = 230 ìH, VDD = 100 V Reverse recovery charge Qrr IDR = 15 A, di /dt = 100 A/ ìs 853 nC Total gate charge Qg VDD = 100 V, ID = 25 A 51.2 nC Gate-source charge Qgs VGS = 10 V 8.2 nC Gate-drain charge 2 Symbol Qgd 19.4 nC Channel-case heat resistance Rth(ch-c) 2.5 /W Channel-atmosphere heat resistance Rth(ch-a) 89.2 /W www.kexin.com.cn