MOSFET SMD Type Mos Field Effect Power Transistor 2SJ302 TO-263 +0.1 1.27-0.1 RDS(on) 0.24 (VGS=-4V,ID=-6A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss Ciss=1200PF TYP. 5.60 (VGS=-10V,ID=-8A) +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 RDS(on) 0.1 +0.2 8.7-0.2 Low on-state resistance +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 Features Unit: mm 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS -60 V Gate to source voltage VGSS -20,+10 V Drain current (DC) ID 16 A Drain current(pulse) * ID 64 A Power dissipation PD 75 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d W 1%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=-60V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Turn-off delay time Fall time Typ Max Unit -10 A 10 16V,VDS=0 VGS(off) VDS=-10V,ID=-1mA Output capacitance Rise time Min -1.0 VDS=-10V,ID=-8A -2.0 5.0 A V s VGS=-10V,ID=-8A 75 100 m VGS=-4V,ID=-6A 130 240 m 1200 pF 670 pF 290 pF td(on) 30 ns tr 170 ns 150 ns td(off) VDS=-10V,VGS=0,f=1MHZ VGS(on)=-10V,VDD=-30V,ID=--8A RL=3.75 ,RG=10 tf 130 ns Total Gate Charge QG VGS=-10V,ID=-8A 42 nc Gate to Source Charge QGS ID=-16V 3 nc Gate to Drain Charge QGD VDD=-48V Reverse Recovery Time trr Reverse Recvery Charge Qrr Diode Forward Voltage VSD IF=-16A,VGS=0,di/dt=50A/ IF=-16A,VGS=0 s 17 nc 110 ns 220 nc 1 V www.kexin.com.cn 1