MOSFET SMD Type MOS Field Effect Transistors 2SJ356 SOT-89 Features Unit: mm +0.1 4.50-0.1 (VGS=-10V,ID=-1.0A) +0.1 2.50-0.1 RDS(on)=0.50 1 +0.1 4.00-0.1 (VGS=-4V,ID=-1.0A) 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 RDS(on)=0.95 +0.1 1.50-0.1 +0.1 1.80-0.1 Low on-state resistance 1 Gate 1. Source Base 1. 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS -20,+10 V Drain current (DC) ID 2.0 A Drain current(pulse) * ID 4 A Power dissipation PD 2.0 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d 1%. www.kexin.com.cn 1 MOSFET SMD Type 2SJ356 Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=-60V,VGS=0 IGSS VGS= Min 16/+10V,VDS=0 -1.0 VDS=-10V,ID=-1.0A 1.0 RDS(on) Max Unit -10 A 10 VGS(off) VDS=-10V,ID=-1mA Yfs Typ -1.4 -2.0 S VGS=-4V,ID=-1.0A 0.65 0.95 VGS=-10V,ID=-1.0A 0.41 0.50 Ciss VDS=-10V,VGS=0,f=1MHZ A V 270 pF Output capacitance Coss 145 pF Reverse transfer capacitance Crss 55 pF Turn-on delay time td(on) 4.3 ns Rise time Turn-off delay time Fall time Total Gate Charge 2 Symbol tr td(off) VGS(on)=-10V,VDD=-25V,ID=--1A RL=255 ,RG=10 tf Qg Gate to Source Charge QGS Gate Drain Charge VGS=-10V,ID=-2.0A,VDD=-48V,IG=-2mA 21 ns 115 ns 75 ns 11.6 nC 1.0 nC QGD 3.8 nC Reverse Recovery time trr 82 ns Reverse Recovery Charge Qrr 94 nC www.kexin.com.cn IF=2.0A,VGS=0,di/dt=50A/ s