IC MOSFET SMD Type Silicon P-Channel MOSFET 2SJ319S TO-252 Features Low on-state resistance Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 High speed switching 3.80 (VGS=-10V,ID=-2A) +0.15 0.50-0.15 RDS(on)=2.3 +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 1 Gate 2 Drain +0.15 4.60-0.15 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS -200 V Gate to source voltage VGSS 20 V Drain current (DC) ID -3 A Drain current(pulse) * ID -12 A Power dissipation PD 20 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d 1%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain to source breakdown voltage VDSS ID=-10mA,VGS=0 Gate to source breakdown voltage VGSS IG = Drain cut-off current IDSS VDS=-160V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Yfs Ciss Coss Reverse transfer capacitance Turn-on delay time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time A,VDS=0 Max V 16V,VDS=0 -2.0 VDS=-10V,ID=-2A 1.0 Unit V 20 RDS(on) VGS=-10V,ID=-2A Output capacitance Typ -200 VGS(off) VDS=-10V,ID=-1mA Input capacitance Rise time 100 Min -100 A 10 A -4.0 1.7 1.7 V S 2.3 330 pF 130 pF Crss 25 pF td(on) 10 ns tr 30 ns 40 ns VDS=-10V,VGS=0,f=1MHZ VGS(on)=-10V,ID=--2A RL=15 td(off) tf VDF trr IF=-3A,VGS=0 IF=-3A,VGS=0,dif/dt=50A/ s 30 ns -1.15 V 180 ns www.kexin.com.cn 1