IC MOSFET SMD Type MOS Field Effect Power Transistors 2SJ324 TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 0.127 max 3.80 (VGS=-4V,ID=-0.8A) Built-in G-S Gate Protection Diode +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)=0.36 Unit: mm +0.1 2.30-0.1 +0.25 2.65-0.1 (VGS=-10V,ID=-1A) +0.15 0.50-0.15 RDS(on)=0.18 +0.2 9.70-0.2 Low on-state resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.28 1.50-0.1 Features 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDSS -30 V Gate to source voltage (DC) VGSS -20,+10 V Gate to source voltage (AC) VGSS 20 V ID 2.0 A Drain to source voltage Drain current (DC) Drain current(pulse) * ID TC=25 Power dissipation PD TA=25 8.0 W 1.0 W Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 s; d A 20 1%. www.kexin.com.cn 1 MOSFET IC SMD Type 2SJ324 Electrical Characteristics Ta = 25 Parameter Testconditons Drain to source breakdown voltage VDSS ID=-10mA,VGS=0 Gate to source breakdown voltage VGSS IG = Drain cut-off current IDSS VDS=-30V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance 100 Min RDS(on) Max -200 A,VDS=0 V -10 16V,VDS=0 10 VDS=-10V,ID=-1A -1.0 -1.5 1.0 1.9 -2.0 0.18 0.25 VGS=-4V,ID=-0.8A 0.36 0.52 VDS=-10V,VGS=0,f=1MHZ A A V S VGS=-10V,ID=-1A Ciss Unit V 20 VGS(off) VDS=-10V,ID=-1mA Yfs Typ 330 pF Output capacitance Coss 290 pF Reverse transfer capacitance Crss 105 pF Turn-on delay time td(on) 7 ns 35 ns 40 ns 30 ns Rise time Turn-off delay time Fall time Total Gate Charge 2 Symbol tr td(off) tf Qg Gate to Source Charge QGS Gate Drain Charge QGD Body Diode Forward Voltage VF Reverse Recovery time trr Reverse Recovery Charge Qrr www.kexin.com.cn VGS(on)=-10V,VDD=-15V,ID=--1A RL=15 ,RG=10 VGS=-10V,ID=-2.0A,VDD=-24V IF=2.0A,VGS=0 IF=2.0A,VGS=0,di/dt=50A/ s 12 nC 1.5 nC 4.5 nC 0.9 V 50 ns 40 nC