IC MOSFET SMD Type MOS Field Effect Transistor 2SK3716 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low Ciss: Ciss = 2700 pF TYP. Built-in gate protection diode 2.3 +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 RDS(on)2 = 9.1 mÙ MAX. (VGS = 4.5 V, ID = 30 A) +0.15 0.50-0.15 +0.2 9.70-0.2 RDS(on)1 = 6.5 mÙ MAX. (VGS = 10 V, ID = 30 A) 3.80 Super low on-state resistance: 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 40 Gate to source voltage VGSS 20 V ID 60 A 240 A Drain current Idp * Power dissipation TA=25 1.0 PD V W 84 TC=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Symbol VDS=40V,VGS=0 Min Typ IGSS VGS= 20V,VDS=0 VDS=10V,ID=1mA 1.5 2.0 Yfs VDS=10V,ID=30A 22 43 RDS(on)1 VGS=10V,ID=30A RDS(on)2 VGS=4.5V,ID=30A Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Max 10 VGS(off) Input capacitance Total Gate Charge Testconditons IDSS 10 2.5 Unit A A V S 5.2 6.5 mÙ 6.6 9.1 mÙ 2700 pF 770 pF Crss 290 pF ton 11 ns 13 ns QG Gate to Source Charge QGS Gate to Drain Charge QGD VDS=10V,VGS=0,f=1MHZ ID=30A,VGS(on)=10V,RG=0 ,VDD=20V VDD = 32V VGS = 10 V ID =60A 69 ns 14 ns 50 nC 9 nC 13 nC www.kexin.com.cn 1