MOSFET SMD Type MOS Field Effect Transistor 2SK3740 +0.1 1.27-0.1 TO-263 Features Gate voltage rating: Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 30 V RDS(on) = 160 mÙ MAX. (VGS = 10 V, ID = 10 A) 5.60 +0.2 15.25-0.2 +0.2 8.7-0.2 Low on-state resistance 0.1max +0.1 1.27-0.1 QG = 47 nC TYP. (VDD = 200 V, VGS = 10 V, ID = 20 A) Surface mount package available +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 5.28-0.2 Low gate charge 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 250 V Gate to source voltage VGSS 30 V ID 20 A Idp * 60 A Drain current Power dissipation TA=25 1.5 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 100 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=250V,VGS=0 Gate leakage current IGSS VGS= 30V,VDS=0 VGS(off) VDS=10V,ID=1mA 2.5 Yfs VDS=10V,ID=10A 7.0 RDS(on) VGS=10V,ID=10A Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss VDS=10V,VGS=0,f=1MHZ Typ Max 10 10 3.5 4.5 15 0.12 Unit A A V S 0.16 Ù 1720 pF Output capacitance Coss 330 pF Reverse transfer capacitance Crss 170 pF Turn-on delay time ton 17 ns 17 ns 49 ns 9 ns Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge QGD ID=10A,VGS(on)=10V,RG=0 ,VDD=125V VDD = 200V VGS = 10 V ID =20A 47 nC 7 nC 25 nC www.kexin.com.cn 1