MOSFET SMD Type Product specification 2SK3431 +0.1 1.27-0.1 TO-263 MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.9 m MAX. (VGS = 4 V, ID = 42 A) +0.2 4.57-0.2 5.60 RDS(on)1 = 5.6m +0.2 8.7-0.2 Super low on-state resistance: +0.1 1.27-0.1 +0.2 15.25-0.2 Features Unit: mm 0.1max +0.1 1.27-0.1 Built-in gate protection diode +0.2 2.54-0.2 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 5.28-0.2 Low Ciss: Ciss = 6100 pF TYP. 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Drain to source voltage VDSS 40 Gate to source voltage VGSS 20 V ID 83 A 332 A Drain current Idp * Power dissipation TC=25 100 PD V W 1.5 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW Unit 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=40V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 30 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance 10 A 10 2.0 A 2.5 V VDS=10V,ID=42A VGS=10V,ID=42A 4.5 5.6 m RDS(on)2 VGS=4V,ID=42A 6.2 8.9 m Ciss Coss Reverse transfer capacitance Crss Turn-on delay time Rise time Turn-off delay time toff 60 S 6100 pF 1400 pF 700 pF ton 120 ns tr 1800 ns 350 ns VDS=10V,VGS=0,f=1MHZ ID=42A,VGS(on)=10V,RG=10 ,VDD=20V tf 440 ns QG 110 nC 18 nC 31 nC Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com Unit Yfs Input capacitance Total Gate Charge Max RDS(on)1 Output capacitance Fall time Typ ID =83A, VDD =32V, VGS = 10 V [email protected] 4008-318-123 1 of 1