TYSEMI 2SK3431

MOSFET
SMD Type
Product specification
2SK3431
+0.1
1.27-0.1
TO-263
MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 8.9 m
MAX. (VGS = 4 V, ID = 42 A)
+0.2
4.57-0.2
5.60
RDS(on)1 = 5.6m
+0.2
8.7-0.2
Super low on-state resistance:
+0.1
1.27-0.1
+0.2
15.25-0.2
Features
Unit: mm
0.1max
+0.1
1.27-0.1
Built-in gate protection diode
+0.2
2.54-0.2
+0.1
0.81-0.1
2.54
+0.2
2.54-0.2
+0.2
5.28-0.2
Low Ciss: Ciss = 6100 pF TYP.
5.08
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
40
Gate to source voltage
VGSS
20
V
ID
83
A
332
A
Drain current
Idp *
Power dissipation
TC=25
100
PD
V
W
1.5
TA=25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
Unit
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Drain cut-off current
IDSS
VDS=40V,VGS=0
Gate leakage current
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
1.5
30
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
10
A
10
2.0
A
2.5
V
VDS=10V,ID=42A
VGS=10V,ID=42A
4.5
5.6
m
RDS(on)2
VGS=4V,ID=42A
6.2
8.9
m
Ciss
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
toff
60
S
6100
pF
1400
pF
700
pF
ton
120
ns
tr
1800
ns
350
ns
VDS=10V,VGS=0,f=1MHZ
ID=42A,VGS(on)=10V,RG=10 ,VDD=20V
tf
440
ns
QG
110
nC
18
nC
31
nC
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
http://www.twtysemi.com
Unit
Yfs
Input capacitance
Total Gate Charge
Max
RDS(on)1
Output capacitance
Fall time
Typ
ID =83A, VDD =32V, VGS = 10 V
[email protected]
4008-318-123
1 of 1