Product specification BAP65-05 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High voltage, current controlled 1 0.55 Two elements in common cathode configuration +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 RF resistor for RF switches +0.05 0.1-0.01 +0.1 0.97-0.1 Low diode capacitance 0-0.1 +0.1 0.38-0.1 Low diode forward resistance (low loss). 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5 P a ra m e te r S ym bol M in M ax U n it c o n tin u o u s re v e rs e v o lta g e VR 30 V c o n tin u o u s fo rw a rd c u rre n t IF 100 mA 250 mW to ta l p o w e r d is s ip a tio n Ts 90 P to t s to ra g e te m p e ra tu re T s tg -6 5 +150 ju n c tio n te m p e ra tu re Tj -6 5 +150 th e rm a l re s is ta n c e fro m ju n c tio n to s o ld e rin g p o in t http://www.twtysemi.com [email protected] R th j-s 220 4008-318-123 K /W 1 of 2 Product specification BAP65-05 Electrical Characteristics Ta = 25 Symbol Conditions Typ Max Unit forward voltage Parameter VF IF = 50 mA 0.95 1.1 V reverse leakage current VR VR = 20 V 20 nA diode capacitance Cd diode forward resistance rD VR = 20 V; f = 1 MHz 0.425 IF = 1 mA; f = 100 MHz 1 0.9 IF = 100 mA; f = 100 MHz 0.35 VR = 0; f = 900 MHz 9.4 VR = 0; f = 1800 MHz 4.8 2 |s21| |s21|2 0.8 0.95 |s21| insertion loss 0.525 0.65 2 insertion loss VR = 3 V; f = 1 MHz 0.56 |s21|2 insertion loss 0.9 IF = 5 mA; f = 100 MHz; note 1 |s21| insertion loss 0.7 0.575 IF = 10 mA; f = 100 MHz; note 1 2 isolation VR = 0; f = 1 MHz VR = 1 V; f = 1 MHz VR = 0; f = 2450 MHz 3.1 IF = 1 mA; f = 900 MHz 0.1 IF = 1 mA; f = 1800 MHz 0.18 IF = 1 mA; f = 2450 MHz 0.28 IF = 5 mA; f = 900 MHz 0.08 IF = 5 mA; f = 1800 MHz 0.16 IF = 5 mA; f = 2450 MHz 0.26 IF = 10 mA; f = 900 MHz 0.07 IF = 10 mA; f = 1800 MHz 0.15 IF = 10 mA; f = 2450 MHz 0.25 IF = 100 mA; f = 900 MHz 0.06 IF = 100 mA; f = 1800 MHz 0.14 IF = 100 mA; f = 2450 MHz 0.24 when switched from IF = 10 mA to charge carrier life time L IR = 6mA; RL = 100 series inductance LS dB dB dB dB dB 0.17 s 1.4 nH ,measured at IR = 3 mA IF = 100 mA; f = 100 MHz pF Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking 7Kp http://www.twtysemi.com [email protected] 4008-318-123 2 of 2