Diodes SMD Type Silicon PIN diode BAP64-06 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Low diode capacitance 1 0.55 RF resistor for RF attenuators and switches +0.1 1.3-0.1 +0.1 2.4-0.1 High voltage, current controlled 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low diode forward resistance +0.05 0.1-0.01 +0.1 0.97-0.1 Low series inductance 0-0.1 +0.1 0.38-0.1 For applications up to 3 GHz. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol continuous reverse voltage continuous forward current total power dissipation Ts = 90 storage temperature junction temperature thermal resistance from junction to soldering point Max Unit VR Min 175 V IF 100 mA P tot 250 mW T stg -65 +150 Tj -65 +150 R th j-s 220 K/W Electrical Characteristics Ta = 25 Parameter Symbol forward voltage Conditions VF reverse leakage current diode capacitance VR Cd diode forward resistance IF = 50 mA rD Max Unit 0.95 1.1 V 10 VR = 20 V 1 VR = 0; f = 1 MHz 0.52 VR = 1 V; f = 1 MHz 0.37 VR = 20 V; f = 1 MHz 0.23 0.35 20 40 IF = 1 mA; f = 100 MHz; note 1 10 20 IF = 10 mA; f = 100 MHz; note 1 2 3.8 IF = 100 mA; f = 100 MHz; note 1 0.7 1.35 IR = 6mA; RL = 100 LS A pF IF = 0.5 mA; f = 100 MHz; note 1 L series inductance Typ VR = 175 V when switched from IF = 10 mA to charge carrier life time Min 1.55 s 1.4 nH ,measured at IR = 3 mA Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. Marking Marking 6Kp www.kexin.com.cn 1