KEXIN BAP65-05

Diodes
SMD Type
Silicon PIN diode
BAP65-05
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
High voltage, current controlled
1
0.55
Two elements in common cathode configuration
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
RF resistor for RF switches
+0.05
0.1-0.01
+0.1
0.97-0.1
Low diode capacitance
0-0.1
+0.1
0.38-0.1
Low diode forward resistance (low loss).
1.Base
2.Emitter
3.collector
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
S ym bol
M in
M ax
U n it
c o n tin u o u s re v e rs e v o lta g e
VR
30
V
c o n tin u o u s fo rw a rd c u rre n t
IF
100
mA
250
mW
to ta l p o w e r d is s ip a tio n
Ts
90
P to t
s to ra g e te m p e ra tu re
T s tg
-6 5
+150
ju n c tio n te m p e ra tu re
Tj
-6 5
+150
th e rm a l re s is ta n c e fro m ju n c tio n to s o ld e rin g p o in t
R th
j-s
220
K /W
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1
Diodes
SMD Type
BAP65-05
Electrical Characteristics Ta = 25
Symbol
Conditions
Typ
Max
Unit
forward voltage
Parameter
VF
IF = 50 mA
0.95
1.1
V
reverse leakage current
VR
VR = 20 V
20
nA
diode capacitance
Cd
diode forward resistance
rD
VR = 20 V; f = 1 MHz
0.425
IF = 1 mA; f = 100 MHz
1
0.9
IF = 100 mA; f = 100 MHz
0.35
VR = 0; f = 900 MHz
9.4
VR = 0; f = 1800 MHz
4.8
2
|s21|
|s21|2
0.8
0.95
|s21|
insertion loss
0.525
0.65
2
insertion loss
VR = 3 V; f = 1 MHz
0.56
|s21|2
insertion loss
0.9
IF = 5 mA; f = 100 MHz; note 1
|s21|
insertion loss
0.7
0.575
IF = 10 mA; f = 100 MHz; note 1
2
isolation
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 0; f = 2450 MHz
3.1
IF = 1 mA; f = 900 MHz
0.1
IF = 1 mA; f = 1800 MHz
0.18
IF = 1 mA; f = 2450 MHz
0.28
IF = 5 mA; f = 900 MHz
0.08
IF = 5 mA; f = 1800 MHz
0.16
IF = 5 mA; f = 2450 MHz
0.26
IF = 10 mA; f = 900 MHz
0.07
IF = 10 mA; f = 1800 MHz
0.15
IF = 10 mA; f = 2450 MHz
0.25
IF = 100 mA; f = 900 MHz
0.06
IF = 100 mA; f = 1800 MHz
0.14
IF = 100 mA; f = 2450 MHz
0.24
when switched from IF = 10 mA to
charge carrier life time
L
IR = 6mA; RL = 100
series inductance
LS
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
2
7Kp
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dB
dB
dB
dB
dB
0.17
s
1.4
nH
,measured at IR = 3 mA
IF = 100 mA; f = 100 MHz
pF