Silicon Schottky Diode BAT 66-05 Preliminary Data Low-power Schottky rectifier diode ● For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes ● Type Marking Ordering Code (tape and reel) BAT 66-05 BAT 66-05 Q62702-A988 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 40 V Forward current IF 2 A Average forward current, 50 Hz IFAV 1 Surge forward current, t ≤ 10 ms IFSM 10 Total power dissipation, TS ≤ 126 ˚C Ptot 1.2 W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 55 … + 150 Junction - ambient2) Rth JA ≤ 160 Junction - soldering point Rth JS ≤ 20 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAT 66-05 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Reverse current VR = 25 V VR = 25 V, TA = 85 ˚C IR Forward voltage IF = 10 mA IF = 100 mA IF = 1 A VF Diode capacitance VR = 10 V, f = 1 MHz CT Forward current IF = f (VF) Semiconductor Group Values min. typ. max. – – – – 10 1 – – – 0.28 0.35 0.47 0.35 – 0.60 – 30 40 µA mA V Reverse current IR = f (VR) 2 Unit pF BAT 66-05 Forward current IF = f (TA*; TS) * Package mounted on epoxy Semiconductor Group 3