INFINEON BAT64-07W

BAT 64-07W
Silicon Schottky Diodes
3
• For low-loss, fast-recovery, meter protection,
4
bias isolation and clamping applications
• Integrated diffused guard ring
• Low forward voltage
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BAT 64-07W
67s
1 = C1 2 = C2 3 = A2 4 = A1 SOT-343
Q62702-A3470
Package
Maximum Ratings
Parameter
Symbol
Diode reverse voltage
VR
40
V
Forward current
IF
250
mA
Average forward current (50/60Hz, sinus)
I FAV
120
Surge forward current (t< 100µs)
I FSM
800
Total power dissipation, T S ≤ 104 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
T stg
Value
Unit
-55...+150
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
RthJA
≤455
RthJS
≤185
K/W
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu
Semiconductor Group
Semiconductor Group
11
Sep-07-1998
1998-11-01
BAT 64-07W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
2
IR
-
-
200
DC characteristics
Reverse current
µA
VR = 30 V
Reverse current
VR = 30 V, TA = 85 °C
Forward voltage
mV
VF
I F = 1 mA
-
320
350
I F = 10 mA
-
385
430
I F = 30 mA
-
440
520
I F = 100 mA
-
570
750
-
4
6
AC characteristics
Diode capacitance
CT
pF
VR = 1 V, f = 1 MHz
Forward current IF = f (V F)
Reverse current IR = f (VR)
T A = Parameter
TA = Parameter
ΙF
10
mA
10
2
BAT 64...
EHB00057
ΙR
10 2
µA
BAT 64...
EHB00058
TA = 125 C
10 1
1
85 C
TA = -40
25
85
125
10 0
C
C
C
C
10 0
10 -1
25 C
10 -1
10 -2
10 -2
0
0.5
V
10 -3
1
VF
Semiconductor Group
Semiconductor Group
0
10
20
V
30
VR
22
Sep-07-1998
1998-11-01
BAT 64-07W
Forward current IF = f (TA*;TS)
* Package mounted on epoxy
300
mA
TS
200
IF
TA
150
100
50
0
0
20
40
60
80
120 °C
100
150
TA,TS
Permissible Pulse Load R THJS = f(t p)
Permissible Pulse Load IFmax/I FDC = f(t p)
10 3
10 2
IFmax / IFDC
K/W
RthJS
10 2
10 1
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1 -6
10
-
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
Semiconductor Group
Semiconductor Group
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
33
Sep-07-1998
1998-11-01