Diodes SMD Type Silicon Schottky Doide BAT62-03W SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm +0.1 1.3-0.1 Features Low Barrier diode for detectors up to GHz frequencies +0.1 2.6-0.1 1.0max 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Diode reverse voltage VR 40 V Forward current IF 40 mA Junction current Tj 150 Tstg -55 to+150 Ptot 100 Storage temperature Total power dissipation Junction ambient Ts 85 (1) Junction-soldering point mW RthJA 650 K/W RthJS 810 K/W Note: 1.Package mounted on an epoxy pcb 15 mm 16.7mmm 0.7 mm Electrical Characteristics Ta = 25 Parameter Symbol Test Condition Min Typ Max Unit Breakdown current IR Forward voltage VF IF = 2 mA 0.58 1 V Diode capacitance CT V R = 0; f = 1 MHz 0.35 0.6 pF Case capacitance CC f = 1 MHz 0.1 pF Differential forward resistance RO V R = , f = 10 kHz 225 k Series inductance chip to ground Ls 10 V R = 40 V, T A = 25 2 A nH Marking Marking L www.kexin.com.cn 1