INFINEON 62S

BAT 62-07W
Silicon Schottky Diode
3
• Low barrier diode for detectors up to GHz
4
frequencies
2
1
VPS05605
4
1
3
2
EHA07008
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
BAT 62-07W
62s
Pin Configuration
1=C1
2=C2
3=A2
Package
4=A1
SOT-343
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
40
V
Forward current
IF
20
mA
Total power dissipation, TS = 103 °C
Ptot
100
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55 ... 150
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
1
RthJA
≤ 630
RthJS
≤ 470
K/W
Oct-07-1999
BAT 62-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR
-
-
10
µA
VF
-
0.58
1
V
CT
-
0.35
0.6
pF
CC
-
0.1
-
R0
-
225
-
kΩ
Ls
-
1.8
-
nH
DC characteristics
Reverse current
VR = 40 V
Forward voltage
IF = 2 mA
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Case capacitance
f = 1 MHz
Differential resistance
VR = 0 , f = 10 kHz
Series inductance
2
Oct-07-1999
BAT 62-07W
Forward current IF = f (TA *;TS )
Forward current IF = f (VF )
* mounted on alumina
TA = parameter
10 4
25
uA
mA
10 3
IF
IF
TA = 25°C
TA = 85°C
TA = 125°C
TA = -40°C
TS
TA
15
10
10 2
5
0
0
20
40
60
80
100
120 °C
10 1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
150
TA,TS
V
2.0
VF
Permissible Pulse Load
Permissiple pulse load IFmax/IFDC = f(tp)
IFmax / IFDC = f(tp)
10 1
IFmax / IFDC
10 3
RthJS
K/W
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -7
10
0
tp
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
3
Oct-07-1999
BAT 62-07W
Diode capacitance CT = f (VR)
Reverse current IR = f (VR)
f = 1MHz
T A = Parameter
10 3
0.6
uA
pF
TA = 125°C
0.4
TA = 85°C
IR
CT
10 2
10 1
0.3
0.2
TA = 25°C
10 0
0.1
0.0
0
5
10
15
V
20
10 -1
0
30
5
10
15
20
25
30
VR
V
40
VR
Rectifier voltage Vout = f (Vin )
f = 900 MHz
RL = parameter in kΩ
10 4
mV
10 3
VO
10 2
Testcircuit:
10 1
D.U.T
10
0
1000
500
200
100
50
20
R L=10
10 -1
10 -2
10 -3 0
10
10
1
10
2
VI
R IN
50Ω
10
3
mV 10
CL
R L V0
1nF
4
VI
4
Oct-07-1999