Product specification BAT62-07W SOT-343 Unit: mm Features Low barrier diode for detectors up to GHz frequencies. Absolute Maxim um Ratings Ta = 25 Symbol Value Unit Diode reverse voltage Parameter VR 40 V Forward current IF 20 mA P tot 100 mW Tj 150 T stg -55 to + 150 Total power dissipation, T S = 103 Junction temperature Storage temperature range Junction - ambient R th JA 630 K/W Junction - soldering point R th JS 470 K/W Electrical Characteristics Ta = 25 Parameter Reverse current Symbol Test Condition IR V R = 40 V Min Typ Max Unit 10 A Forward voltage IF IF = 2 mA 0.58 1 V Diode capacitance CT f = 1 MHz; V R = 0 0.35 0.6 pF Case capacitance CC f = 1 MHz 0.1 Differential resistance RO V R = 0, f = 10 KHz 225 Series inductance chip to ground LS 2 pF K nH Marking Marking 62s http://www.twtysemi.com [email protected] 4008-318-123 1 of 1