Diodes SMD Type Silicon Schottky Diode BAT62-08S;BAT62-09S SOT-363 Unit: mm 0.525 +0.1 1.3-0.1 0.65 +0.15 2.3-0.15 +0.1 1.25-0.1 Features 0.36 Low barrier diode for detectors up to GHz frequencies 0.1max +0.05 0.1-0.02 +0.05 0.95-0.05 +0.1 0.3-0.1 +0.1 2.1-0.1 Absolute Maxim um Ratings Ta = 25 Param eter Diode reverse voltage Forward current Total power dissipation; T S 105 Junction tem perature Storage tem perature range Sym bol Rating Unit V RM 40 V VR 20 V I FM 100 mA Tj 150 T stg -55 to +150 Junction - soldering point 1) R thJS BAT62-08S BAT62-09S 450 K/W tbd Note 1.For calculation of R thJA please refer to Application Note Therm al Resistance Electrical Characteristics T a = 25 Param eter Sym bol Conditions IR V R = 40 V VF IF = 2 m A ÄV F IF = 2 m A Reverse current Forward voltage Forward voltage m atching 2) Min Typ Max 10 0.58 Unit A 1 V 20 mV Note 2.ÄVF is the difference between lowest and highest VF in a m ultiple diode com ponent. Marking Type BAT62-08S BAT62-09S Marking 62s 69s www.kexin.com.cn 1