KEXIN BAT62-08S

Diodes
SMD Type
Silicon Schottky Diode
BAT62-08S;BAT62-09S
SOT-363
Unit: mm
0.525
+0.1
1.3-0.1
0.65
+0.15
2.3-0.15
+0.1
1.25-0.1
Features
0.36
Low barrier diode for detectors up to GHz frequencies
0.1max
+0.05
0.1-0.02
+0.05
0.95-0.05
+0.1
0.3-0.1
+0.1
2.1-0.1
Absolute Maxim um Ratings Ta = 25
Param eter
Diode reverse voltage
Forward current
Total power dissipation; T S
105
Junction tem perature
Storage tem perature range
Sym bol
Rating
Unit
V RM
40
V
VR
20
V
I FM
100
mA
Tj
150
T stg
-55 to +150
Junction - soldering point 1)
R thJS
BAT62-08S
BAT62-09S
450
K/W
tbd
Note
1.For calculation of R thJA please refer to Application Note Therm al Resistance
Electrical Characteristics T a = 25
Param eter
Sym bol
Conditions
IR
V R = 40 V
VF
IF = 2 m A
ÄV F
IF = 2 m A
Reverse current
Forward voltage
Forward voltage m atching
2)
Min
Typ
Max
10
0.58
Unit
A
1
V
20
mV
Note
2.ÄVF is the difference between lowest and highest VF in a m ultiple diode com ponent.
Marking
Type
BAT62-08S
BAT62-09S
Marking
62s
69s
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