Transistors IC SMD Type PNP General Purpose Transistor BC859,BC860 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low voltage (max. 45 V). 1 0.55 Low current (max. 100 mA). +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol BC859 BC860 Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage VCEO -30 -45 V VEBO -5 Collector current IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA Total power dissipation * Ptot 250 mW Emitter-base voltage Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient * Rth j-a 500 V K/W * Transistor mounted on an FR4 printed-circuit board. www.kexin.com.cn 1 Transistors IC SMD Type BC859,BC860 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current BC859B,BC860B DC current gain Testconditons ICBO VCB = -30 V, IE = 0 ICBO VCB = -30 V, IE = 0 , Tj = 150 IEBO VEB = -5 V, IC = 0 hFE IC = -2 mA; VCE = -5 V BC859C,BC860C Collector-emitter saturation voltage VCE(sat) VBE(sat) Base-emitter saturation voltage *1 Min VBE Max Unit -1 -15 nA -4 ìA -100 nA 220 475 420 800 IC = -10 mA; IB = -0.5 mA -75 -300 mV IC = -100 mA; IB = -5 mA; -250 -650 mV IC = -10 mA; IB = -0.5 mA -700 IC = -100 mA; IB = -5 mA; Base-emitter voltage *2 Typ IC = -2 mA; VCE = -5 V -850 -600 -650 IC = -10 mA; VCE = -5 V Collector capacitance CC VCB = -10 V; IE = Ie = 0;f = 1 MHz 4.5 Emitter capacitance Ce IC = Ic = 0; VEB = -500 mV; f = 1 MHz 10 Transition frequency fT VCE = -5 V; IC = -10 mA;f = 100 MHz NF IC = -200 µA; VCE = -5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz Noise figure *1. VBEsat decreases by about -1.7 mV/K with increasing temperature. *2. VBE decreases by about -2 mV/K with increasing temperature. hFE Classification 2 TYPE BC859B BC859C Marking 4B 4C TYPE BC860B BC860C Marking 4F 4G www.kexin.com.cn mV mV -750 mV -820 mV pF 100 MHz 4 dB