KEXIN BCW65

Transistors
IC
SMD Type
NPN General Purpose Transistors
BCW65,BCW66
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
0.55
Low collector-emitter saturation voltage.
+0.1
1.3-0.1
+0.1
2.4-0.1
High current gain.
0.4
3
For general AF applications.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
BCW65
BCW66
Unit
Collector-base voltage
Parameter
VCBO
60
75
V
Collector-emitter voltage
VCEO
32
45
V
Emitter-base voltage
VEBO
5
5
V
800
Collector current
IC
Peak collector current
ICM
1
A
IB
100
mA
Peak base current
IBM
200
mA
Total power dissipation,TS = 79
mW
Base current
Ptot
330
Junction temperature
Tj
150
Storage temperature
Tstg
-65 to +150
Junction - soldering point
RthJS
215
mA
K/W
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1
Transistors
IC
SMD Type
BCW65,BCW66
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector-emitter breakdown voltage
BCW65
Testconditons
V(BR)CEO IC = 10 mA, IB = 0
BCW66
BCW65
Collector-base breakdown voltage
V(BR)CBO IC = 10 ìA, IE = 0
BCW65
hFE-grp. B/G
20
VCB = 45 V, IE = 0 , TA = 150
20
IEBO
VEB = 4 V, IC = 0
20
hFE
IC = 100 ìA, VCE = 10 V
B/G
Base-emitter saturation voltage
hFE
VBE(sat)
Transition frequency
IC = 10 mA, VCE = 1 V
110
IC = 100 mA, VCE = 1 V
fT
100
160
250
160
250
400
250
350
630
IC = 100 mA, IB = 10 mA
0.3
IC = 500 mA, IB = 50 mA
0.7
IC = 100 mA, IB = 10 mA
1.25
IC = 500 mA, IB = 50 mA
2
IC = 50 mA, VCE = 5 V, f = 100 MHz
170
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz
6
Emitter-base capacitance
Ceb
VEB = 0.5 V, f = 1 MHz
60
* Pulse test: t
300ìs, D = 2%.
hFE Classification
BCW65
TYPE
Rank
A
B
C
Marking
EAs
EBs
ECs
BCW66
TYPE
2
50
180
VCE(sat)
*
Rank
F
G
H
Marking
EFs
EGs
EHs
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nA
75
hFE
C/H
Collector-emitter saturation voltage *
ìA
80
A/F
hFE-grp.
nA
35
C/H
DC current gain *
V
VCB = 32 V, IE = 0 , TA = 150
ICBO
A/F
hFE-grp. B/G
5
20
C/H
DC current gain *
V
VCB = 45 V, IE = 0
A/F
DC current gain *
60
20
BCW66
Emitter cutoff current
Unit
V
VCB = 32 V, IE = 0
ICBO
BCW66
Collector cutoff current
Max
75
V(BR)EBO IE = 10 ìA, IC = 0
BCW65
Typ
32
45
BCW66
Emitter-base breakdown voltage
Min
V
MHz
pF