KEXIN 2PD1820AR

Transistors
IC
SMD Type
NPN General Purpose Transistor
2PD1820A
Features
High current (max. 500 mA).
Low voltage (max. 50 V).
Low collector-emitter saturation voltage (max. 600 mV).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICM
1
A
Peak base current
IBM
200
mA
Total power dissipation
Ptot
200
mW
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient
Rth j-a
625
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cut-off current
ICBO
Testconditons
Min
Typ
Max
IE = 0; VCB = 20 V
10
nA
ìA
nA
IE = 0; VCB = 20 V; Tj = 150
5
Emitter cut-off current
IEBO
IC = 0; VEB = 4 V
10
DC current gain
2PD1820AQ
2PD1820AR
2PD1820AS
hFE
IC = 150 mA; VCE = 10 V; *
Collector-emitter saturation voltage
Transition frequency
* Pulse test: tp
300 ìs; ä
85
120
170
VCE(sat) IC = 300 mA; IB = 30 mA; *
Collector capacitance
Unit
Cc
IE = ie = 0; VCB = 10 V; f = 1 MHz
fT
IC = 50 mA; VCE = 10 V; f = 100 MHz;*
150
170
240
340
600
mV
15
pF
MHz
0.02.
hFE Classification
TYPE
2PD1820AQ
2PD1820AR
2PD1820AS
Marking
AQ
AR
AS
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