Transistors IC SMD Type Power High Performance Transistor FMMT589 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 0.55 Low equivalent on-resistance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -5 V Peak collector current ICM -2 A Collector current IC -1 A Base current IB -200 mA Ptot 500 mW Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range 1.Base 2.Emitter 3.collector Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -50 Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -30 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector cutoff current ICBO VCB=-30V IEBO V -100 nA VEB=-4V -100 nA Collector-emitter saturation voltage * VCE(sat) IC=-1A,IB=-100mA -0.35 V Base-emitter saturation voltage * VBE(sat) IC=-1A,IB=-100mA -1.2 V Base-emitter voltage * VBE(ON) IC=-1A,VCE=-2V -1.1 V Emitter cut-off current Static Forward Current TransferRatio Current-gain-bandwidth product Output capacitance * Pulse test: tp hFE fT Cobo 300 ìs; d IC=-1mA, VCE=-2V* 100 IC=-500mA,VCE=-2V* 100 IC=-1A, VCE=-2V* 80 IC=-2A, VCE=-2V* 40 IC=-100mA,VCE=-5V,f=100MHz 100 VCB=-10V,f=1MHz 300 MHz 15 pF 0.02. Marking Marking 589 www.kexin.com.cn 1