SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT560 ISSUE 1 – NOVEMBER 1998 FEATURES * Excellent hFE characterisristics up to IC=50mA * Low Saturation voltages E C PARTMARKING DETAIL – 560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -500 V Collector-Emitter Voltage VCEO -500 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -500 mA Continuous Collector Current IC -150 mA Power Dissipation Ptot 500 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO -500 V IC=-100µA Collector-Emitter Breakdown Voltage VBR(CEO) -500 V IC=-10mA* Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE=-100µA Collector Cut-Off Current ICBO ; ICES -100 nA VCB=-500V; VCE=-500V Emitter Cut-Off Current IEBO -100 nA VEB=-5V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 V V IC=-20mA, IB=-2mA * IC=-50mA, IB=-10mA * Base-Emitter Saturation Voltage VBE(sat) -0.9 V IC=-50mA, IB=-10mA * Base-Emitter Turn On Voltage VBE(on) -0.9 V Static Forward Current Transfer Ratio hFE 100 80 15 typ Transition Frequency fT 60 Output Capacitance Cobo Switching times ton toff MAX. 300 300 MHz 8 110 typ. 1.5 typ. IC=-50mA, VCE=-10V * IC=-1mA, VCE =-10V IC=-50mA, VCE =-10V * IC=-100mA, VCE =-10V* VCE=-20V, IC=-10mA, f=50MHz pF VCB=-20V, f=1MHz ns µs VCE=-100V, IC=-50mA, IB1=-5mA, IB2=10mA * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% FMMT560 TYPICAL CHARACTERISTICS 0.8 +25°C IC/IB=10 1.6 0.6 1.2 IC/IB=10 IC/IB=20 IC/IB=50 0.8 0.2 0.4 0 -55°C +25°C +100°C +150°C 0.4 1m 10m 100m 0 10m 1m IC - Collector Current (A) VCE(sat) v IC 100m IC - Collector Current (A) VCE(sat) v IC 1.0 IC/IB=10 VCE=5V 240 0.8 +100°C 0.6 160 +25°C 0.4 -55°C +25°C +100°C +150°C 80 -55°C 0.2 0 0 1m 10m 100m 1 1m IC - Collector Current (A) hFE v IC 10m 100m IC - Collector Current (A) VBE(sat) v IC 1.0 1 0.75 0.1 0.5 -55°C +25°C +100°C +150°C 0.25 DC 1s 100ms 10ms 1ms 100µs 0.01 0 0.001 1m 10m IC - Collector Current (A) VBE(on) v IC 100m 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area 1000