Transistors SMD Type NPN Silcon Planar Medium Power High Gain Transistor FZT692B SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 High gain + very low saturation voltage. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 70 V Emitter-base voltage VEBO 5 V Peak pulse current IC 2 A Continuous collector current ICM 5 A Power dissipation Ptot 2 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT692B Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit BreakdownVoltages V(BR)CBO IC=100ìA 70 V BreakdownVoltages V(BR)CEO IC=10mA * 70 V BreakdownVoltages V(BR)EBO IE=100ìA 5 V Cut-Off Currents ICBO VCB=55V 0.1 ìA Cut-Off Currents IEBO VEB=4V 0.1 ìA Saturation Voltages* IC=0.1A, IB=0.5mA VCE(sat) IC=1A, IB=10mA IC=2A, IB=200mA 0.15 0.5 0.5 V Saturation Voltages VBE(sat) IC=1A, IB=10mA 0.9 V Base-emitter ON voltage * VBE(on) IC=1A, VCE=2V 0.9 V Static Forward Current Transfer Ratio * Transitional frequency hFE fT IC=100mA, VCE=2V IC=500mA, VCE=2V IC=1A, VCE=2V 500 400 150 IC=50mA, VCE=5V f=50MHz 150 MHz Input capacitance Cibo VEB=0.5V, f=1MHz 200 pF Output capacitance Cobo VCB=10V, f=1MHz 12 pF Turn-on time t(on) IC=500mA, VCC=10V 46 ns Turn-off time t(off) IB1=IB2=50mA 1440 ns * Pulse test: tp = 300 ìs; d 0.02. Marking Marking 2 Testconditons FZT692B www.kexin.com.cn