KEXIN FZT851

Transistors
SMD Type
NPN Silicon Planar High Current
(High Performance)Transistor
FZT851
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A.
+0.1
3.00-0.1
6 Amps continuous current, up to 20 Amps peak current.
+0.15
1.65-0.15
+0.2
3.50-0.2
+0.2
6.50-0.2
Features
+0.2
0.90-0.2
+0.3
7.00-0.3
Very low saturation voltages.
4
Excellent hFE characteristics specified up to 10 Amps.
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
150
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
6
V
Peak pulse current
IC
6
A
Continuous collector current
ICM
20
A
Power dissipation
Ptot
3
W
Tj,Tstg
-55 to +150
Operating and storage temperature range
www.kexin.com.cn
1
Transistors
SMD Type
FZT851
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=100ìA
150
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=10mA
60
V
Emitter-base breakdown voltage
V(BR)EBO IE=100ìA
6
V
Collector Cut-Off Current
ICBO
VCB=120V
VCB=120V,Ta = 100
Emitter Cut-Off Current
IEBO
VEB=6V
10
nA
Collector-emitter saturation voltage *
IC=0.1A, IB=5mA
VCE(sat) IC=1A, IB=50mA
IC=2A, IB=50mA
IC=6A, IB=300mA
50
100
170
375
mV
Base-emitter saturation voltage *
VBE(sat) IC=6A, IB=300mA
1200
mV
Base-Emitter Turn-On Voltage *
VBE(on) IC=6A, VCE=1V
1150
mV
Static Forward Current Transfer Ratio*
hFE
IC=10mA, VCE=1V
100
200
IC=2A, VCE=1V*
100
200
IC=5A, VCE=1V*
75
120
IC=10A, VCE=1V*
25
50
1
nA
ìA
300
50
IC=100mA, VCE=10V f=50MHz
130
MHz
Cobo
VCB=10V, f=1MHz
45
pF
Turn-on time
t(on)
IC=1A, VCC=10V
45
ns
Turn-off time
t(off)
IB1=IB2=100mA
1100
ns
Transitional frequency
fT
Output capacitance
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
2
Testconditons
FZT851
www.kexin.com.cn