KEXIN FCX790A

Transistors
SMD Type
PNP Silicon Power Switching Transistor
FCX790A
Features
2W power dissipation.
6A peak pulse current.
Excellent HFE characteristics.
Low saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current
ICM
-6
A
Peak pulse current
IC
-2
A
Ptot
1
W
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
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Transistors
SMD Type
FCX790A
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO IC=-100ìA
-50
V
Collector-emitter breakdown voltage *
V(BR)CEO IC=-10mA
-40
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100ìA
-5
V
Collector-base cut-off current
ICBO
Emitter Cut-Off Current
IEBO
VCB=-10V
0.1
ìA
VEB=-4V
0.1
ìA
Collector-emitter saturation voltage *
IC=-0.5A, IB=-5mA
VCE(sat) IC=-1A, IB=-10mA
IC=-2A, IB=-50mA
-250
-350
-450
mV
Base-emitter saturation voltage *
VBE(sat) IC=-1A, IB=-10mA
Base-emitter ON voltage *
VBE(on) IC=-1A, VCE=-2V
Static Forward Current Transfer Ratio *
Transitional frequency
hFE
fT
-0.9
-0.8
IC=-10mA,VCE=-2V
IC=-500mA,VCE=-2V
IC=-1A,VCE=-2V
IC=-2A,VCE=-2V
300
250
200
150
IC=-50mA, VCE=-5V, f=50MHz
100
V
V
800
MHz
Input capacitance
Cibo
VEB=0.5V, f=1MHz
225
pF
Output capacitance
Cobo
VCB=-10V, f=1MHz
24
pF
Turn-on time
t(on)
IC=-500mA, VCC=-10V
35
ns
Turn-off time
t(off)
IB1=IB2=-50mA
600
ns
* Pulse test: tp = 300 ìs; d
Marking
Marking
2
Testconditons
790
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0.02.