Transistors SMD Type PNP Silicon Power Switching Transistor FCX790A Features 2W power dissipation. 6A peak pulse current. Excellent HFE characteristics. Low saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -40 V Emitter-base voltage VEBO -5 V Continuous collector current ICM -6 A Peak pulse current IC -2 A Ptot 1 W Tj,Tstg -55 to +150 Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FCX790A Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -50 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -40 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 V Collector-base cut-off current ICBO Emitter Cut-Off Current IEBO VCB=-10V 0.1 ìA VEB=-4V 0.1 ìA Collector-emitter saturation voltage * IC=-0.5A, IB=-5mA VCE(sat) IC=-1A, IB=-10mA IC=-2A, IB=-50mA -250 -350 -450 mV Base-emitter saturation voltage * VBE(sat) IC=-1A, IB=-10mA Base-emitter ON voltage * VBE(on) IC=-1A, VCE=-2V Static Forward Current Transfer Ratio * Transitional frequency hFE fT -0.9 -0.8 IC=-10mA,VCE=-2V IC=-500mA,VCE=-2V IC=-1A,VCE=-2V IC=-2A,VCE=-2V 300 250 200 150 IC=-50mA, VCE=-5V, f=50MHz 100 V V 800 MHz Input capacitance Cibo VEB=0.5V, f=1MHz 225 pF Output capacitance Cobo VCB=-10V, f=1MHz 24 pF Turn-on time t(on) IC=-500mA, VCC=-10V 35 ns Turn-off time t(off) IB1=IB2=-50mA 600 ns * Pulse test: tp = 300 ìs; d Marking Marking 2 Testconditons 790 www.kexin.com.cn 0.02.