Transistors SMD Type NPN Silicon Planar Medium Power High Gain Transistor FZT1047A SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 VCEO = 10V. 5 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 +0.2 6.50-0.2 Features +0.2 0.90-0.2 +0.3 7.00-0.3 20 Amp pulse current. 4 Low saturation voltage. High gain. Extremely low equivalent on-resistance; RCE(sat) = 44mÙ at 5A. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 35 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 5 V Peak pulse current IC 5 A Continuous collector current ICM 20 A IB 500 mA Ptot 2.5 W Tj,Tstg -55 to +150 Base current Power dissipation Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT1047A Electrical Characteristics Ta = 25 Parameter Symbol Min Typ Max Unit 65 V Collector-base breakdown voltage V(BR)CBO IC=100ìA 35 Collector-emitter breakdown voltage * V(BR)CEO IC=10mA 10 16 V Emitter-base breakdown voltage V(BR)EBO IE=100ìA 5 8.9 V ICBO VCB=20V Collector Emitter Cut-Off Current ICES VCE=20V 0.3 10 nA Emitter Cut-Off Current IEBO VEB=4V 0.3 10 nA Collector-emitter saturation voltage * IC=0.5A, IB=10mA I VCE(sat) C=1A, IB=10mA IC=3A, IB=15mA IC=5A, IB=25mA 25 50 140 220 40 70 200 350 mV Base-emitter saturation voltage * VBE(sat) IC=5A, IB=250mA 925 1000 mV Base-emitter ON voltage * VBE(on) IC=5A, VCE=2V 890 975 mV Collector Cut-Off Current Static Forward Current Transfer Ratio * Transitional frequency hFE fT 0.3 IC=10mA, VCE=2V* 280 430 IC=0.5A, VCE=2V* 290 440 IC=1A, VCE=2V* 300 450 IC=5A, VCE=2V* 200 330 IC=20A, VCE=2V* 60 110 IC=50mA, VCE=10V f=50MHz 10 nA 1200 150 MHz Output capacitance Cobo VCB=10V, f=1MHz 85 Turn-on time t(on) IC=4A, VCC=10V 130 ns Turn-off time t(off) IB1=IB2=40mA 230 ns * Pulse test: tp = 300 ìs; d 2 Testconditons www.kexin.com.cn 0.02. 110 pF