Transistors SMD Type PNP Silicon Planar High Current (High Performance) Transistor FZT949 SOT-223 Unit: mm +0.2 3.50-0.2 +0.2 6.50-0.2 0.1max +0.05 0.90-0.05 Extremely low equivalent on-resistance; RCE(sat). 6 Amps continuous current. +0.1 3.00-0.1 Up to 20 Amps peak current. +0.15 1.65-0.15 Features +0.2 0.90-0.2 +0.3 7.00-0.3 4 Very low saturation voltage. Excellent hFE characteristics specified upto 20 Amps. 1 1 base 3 2 +0.1 0.70-0.1 2.9 4.6 2 collector 3 emitter Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -50 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -6 V Continuous collector current ICM -20 A Peak pulse current IC -5.5 A Power dissipation Ptot 3 W Tj,Tstg -55 to +150 Operating and storage temperature range www.kexin.com.cn 1 Transistors SMD Type FZT949 Electrical Characteristics Ta = 25 Parameter Symbol Min Typ -50 -80 Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -30 -45 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -50 -80 V V Collector Cut-Off Current ICBO VCB=-40V VCB=-40V,Ta = 100 -50 -1 nA ìA Emitter Cut-Off Current IEBO VEB=-6V -10 nA -75 -140 -270 -440 V -1100 -1250 V -900 V IC=-0.5A, IB=-10mA* IC=-2A, IB=-200mA* IC=-4A, IB=-400mA* IC=-6A, IB=-250mA* Collector-emitter saturation voltage * VCE(sat) Base-emitter saturation voltage * VBE(sat) IC=-5.5A, IB=-500mA Base-emitter ON voltage * VBE(on) IC=-5.5A, VCE=-1V Static Forward Current Transfer Ratio Transitional frequency hFE fT -50 -85 -190 -350 IC=-10mA, VCE =-1V 100 200 IC=-1A, VCE =-1V* 100 200 IC=-5A, VCE =-1V* 75 140 -1060 300 IC=-20A, VCE =-2V* 35 IC=-100mA, VCE=-10V, f=50MHz 100 MHz Output capacitance Cobo VCB=-10V, f=1MHz 122 pF Turn-on time t(on) IC=-4A, VCC=-10V 120 ns Turn-off time t(off) IB1=IB2=-400mA 130 ns * Pulse test: tp = 300 ìs; d 2 Testconditons www.kexin.com.cn 0.02.