KEXIN HSB276S

Diodes
SMD Type
Silicon Schottky Barrier Diode
HSB276S
Features
High forward current, Low capacitance.
HSB276S which is interconnected in series
configuration is designed for balanced mixer use.
CMPAK package is suitable for high density surface mounting and high speed assembly.
A b s o lu t e M a x im u m R a t in g s T a = 2 5
S ym bol
V a lu e
U n it
R e v e r s e v o lt a g e
P a ra m e te r
VR
3
V
mA
A v e r a g e r e c t if ie d c u r r e n t
IO
30
J u n c t io n t e m p e r a t u r e
Tj
125
S to ra g e te m p e ra tu re
T s tg
-5 5 to + 1 2 5
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
3
Typ
Max
Unit
Forward voltage
VF
IF =1.0 mA
Reverse current
IR
V R =0.5 V
Forward current
IF
V F =0.5 V
Capacitance
C
V R = 0.5 V, f = 1 MHz
0.90
pF
ÄC
V R = 0.5V, f = 1 MHz
0.10
pF
Capacitance deviation
C=200pF, Both forward and
ESD-Capability (Note 1)
V
50
35
30
A
mA
V
reverse direction 1 pulse.
Note
1. Failure criterion ; IR
100
A at V R =0.5 V
Marking
Marking
C2
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