Diodes SMD Type Silicon Schottky Barrier Diode HSB276S Features High forward current, Low capacitance. HSB276S which is interconnected in series configuration is designed for balanced mixer use. CMPAK package is suitable for high density surface mounting and high speed assembly. A b s o lu t e M a x im u m R a t in g s T a = 2 5 S ym bol V a lu e U n it R e v e r s e v o lt a g e P a ra m e te r VR 3 V mA A v e r a g e r e c t if ie d c u r r e n t IO 30 J u n c t io n t e m p e r a t u r e Tj 125 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min 3 Typ Max Unit Forward voltage VF IF =1.0 mA Reverse current IR V R =0.5 V Forward current IF V F =0.5 V Capacitance C V R = 0.5 V, f = 1 MHz 0.90 pF ÄC V R = 0.5V, f = 1 MHz 0.10 pF Capacitance deviation C=200pF, Both forward and ESD-Capability (Note 1) V 50 35 30 A mA V reverse direction 1 pulse. Note 1. Failure criterion ; IR 100 A at V R =0.5 V Marking Marking C2 www.kexin.com.cn 1