Diodes SMD Type Silicon Schottky Barrier Diode HSM107S SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 HSM107S which is interconnected in series configuration is designed 0.55 Low VF and high efficiency. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 for protection from not only external excessive voltage but also +0.05 0.1-0.01 +0.1 0.97-0.1 miss-operation on electric systems. 0-0.1 Absolute Maximum Ratings Ta = 25 Symbol Value Unit Reverse voltage Parameter VR 8 V Peak forward current IFM 0.1 A IFSM (Note 1) 0.5 A IO 50 mA Non-Repetitive Peak forward surge current Average rectified current Junction temperature Tj 125 Storage temperature T stg -55 to +125 +0.1 0.38-0.1 MPAK package is suitable for high density surface mounting and high speed assembly. 1.Base 2.Emitter 3.collector Note 1. Square wave, 10ms Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Reverse voltage VR V R =1.0 mA 8 Reverse current IR VR = 5 V 30 Forward voltage VF IF = 10 mA 0.3 C=200pF , Both forward and ESD-Capability (Note 1) 100 Typ Max Unit pF A V V reverse direction 1 pulse. Note 1. Failure criterion ; IR 60 A at V R =5 V Marking Marking C5 www.kexin.com.cn 1