KEXIN HSB276AS

Diodes
SMD Type
Silicon Schottky Barrier Diode
HSB276AS
Features
High forward current, Low capacitance.
HSB276AS which is interconnected in
series configuration is designed for balanced mixer use.
CMPAK package is suitable for high density surface mounting and high speed assembly.
A b s o lu te M a x im u m R a tin g s T a = 2 5
P a ra m e te r
S ym bol
V a lu e
U n it
VRRM
5
V
R e v e rs e v o lta g e
VR
3
V
A v e ra g e re c tifie d c u rre n t
IO
30
mA
R e p e titiv e p e a k re v e rs e v o lta g e
J u n c tio n te m p e ra tu re
Tj
125
S to ra g e te m p e ra tu re
T s tg
-5 5 to + 1 2 5
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Forward voltage
VF
IF =1.0 mA
3
Reverse current
IR
V R =0.5 V
Forward current
IF
V F =0.5 V
C
V R = 0.5 V, f = 1 MHz
0.90
pF
ÄC
V R = 0.5V, f = 1 MHz
0.10
pF
Capacitance
Capacitance deviation
C=200pF, R= 0
ESD-Capability (Note 1)
Both forward and
Typ
Max
V
50
35
30
Unit
A
mA
V
reverse direction 1 pulse.
Note
100
1. Failure criterion ; IR
A at V R =0.5 V
Marking
Marking
E8
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