Diodes SMD Type Silicon Schottky Barrier Diode HSU88 SOD-123 Unit: mm 2.7 +0.05 1.1-0.05 +0.1 0.55-0.1 +0.1 -0.1 +0.1 1.6-0.1 Features Low capacitance. (C=0.8pF max) +0.1 3.7-0.1 Low forward voltage. Ultra small Resin Package (URP) is suitablefor high density surface 0.50 0.1max 0.35 +0.05 0.1-0.02 mounting and high speed assembly. A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym bol V a lu e U n it R e v e rs e V o lta g e P a ra m e te r VR 10 V A v e ra g e re c tifie d c u rre n t IO 15 mA J u n c tio n te m p e ra tu re Tj 125 S to ra g e te m p e ra tu re T s tg -5 5 to + 1 2 5 Electrical Characteristics Ta = 25 Parameter Symbol Forward voltage VF Reverse current IR Capacitance C Conditions Min IF = 1 mA 350 420 IF = 10 mA 500 580 Max VR = 2 V 0.2 V R = 10 V 10 V R =0 V, f = 1 MHz 0.8 C = 200pF , Both forward and ESD-Capability (Note 1) Typ reverse direction 1 pulse. 30 Unit mV A pF V Note 1. Failure criterion ; IR 400 nA at V R =2 V Marking Marking 9 www.kexin.com.cn 1