KEXIN HSU88

Diodes
SMD Type
Silicon Schottky Barrier Diode
HSU88
SOD-123
Unit: mm
2.7
+0.05
1.1-0.05
+0.1
0.55-0.1
+0.1
-0.1
+0.1
1.6-0.1
Features
Low capacitance. (C=0.8pF max)
+0.1
3.7-0.1
Low forward voltage.
Ultra small Resin Package (URP) is suitablefor high density surface
0.50
0.1max
0.35
+0.05
0.1-0.02
mounting and high speed assembly.
A b s o lu te M a x im u m R a tin g s T a = 2 5
S ym bol
V a lu e
U n it
R e v e rs e V o lta g e
P a ra m e te r
VR
10
V
A v e ra g e re c tifie d c u rre n t
IO
15
mA
J u n c tio n te m p e ra tu re
Tj
125
S to ra g e te m p e ra tu re
T s tg
-5 5 to + 1 2 5
Electrical Characteristics Ta = 25
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Capacitance
C
Conditions
Min
IF = 1 mA
350
420
IF = 10 mA
500
580
Max
VR = 2 V
0.2
V R = 10 V
10
V R =0 V, f = 1 MHz
0.8
C = 200pF , Both forward and
ESD-Capability (Note 1)
Typ
reverse direction 1 pulse.
30
Unit
mV
A
pF
V
Note
1. Failure criterion ; IR
400 nA at V R =2 V
Marking
Marking
9
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